CdS0.9Te0.1 thin films of various thicknesses (680-2740 nm) were deposited onto the clean glass and stainless steel substrates using a chemical deposition technique. The as-grown films exhibited photoactivity in an aqueous 0.5 M NaOH + 0.5 M Na2S + 0.5 M S (pH = 12.6) electrolyte. An interface between n-CdS0.9Te0.1 semiconductor photoelectrode and an electrolyte redox couple was formed and investigated through the capacitance-voltage, current-voltage and photovoltaic characteristics. The results on the capacitance-voltage and current-voltage measurements in dark are compared with the photovoltage measurements. The measurement on the characteristic photovoltaic properties showed a significant enhancement in the cell performance at a thickness of 2740 nm (0.658% efficiency). (C) 2003 Elsevier Science B.V. All rights reserved.