Materials Chemistry and Physics, Vol.72, No.1, 93-96, 2001
Bonding structure of CNx films synthesized by nitrogen implantation into diamond films
The CNx films were synthesized by nitrogen ion (with the energy of 10 and 60 keV, respectively) implantation into diamond films. The bonding structure of the implanted films as well as diamond films was investigated using both Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). For the diamond film implanted by 10 keV nitrogen ions. Raman spectrum exhibits stronger diamond peak at 1332cm(-1) and a weak graphitic peak(G band) at 1550cm(-1), whileN 1s XPS data show two main peaks at similar to 398.5 and 400.0 eV, respectively. As for the diamond film implanted by 60 keV nitrogen ions, the dominant peak in N Is XPS spectrum locates at similar to 400.0 eV, Correspondingly, the graphitic peak in Raman spectrum becomes pronounced. By comparison with the Raman spectra, the assignments of C 1s and N 1s binding states in XPS for the implanted films are made, in which the peaks at similar to 285.9 and 400.0 eV are attributed to C-N sp(2) bonding, whereas the peaks at similar to 287.8 and 398.5 eV are ascribed to C-N sp(3) bonding.