화학공학소재연구정보센터
Materials Chemistry and Physics, Vol.68, No.1-3, 72-76, 2001
Etch patterns on flux grown DyFeO3 crystal surfaces
As-grown (1 0 0) and (1 1 0) faces of flux grown DyFeO3 crystals have been subjected to etching. Etch pits on (1 0 0) faces are rectangular whereas terraced pyramidal pits are shown on (1 1 0) faces. Rows of etch pits on these faces are attributed to the presence of low-angle grain boundaries. The results of etching of (1 0 0) and (1 1 0) faces in HNO3 in the laboratory are discussed. Through comparison of the etch patterns on as-obtained crystals and on laboratory etching, it is inferred that the cleaning process in 20% HNO3 is not responsible for the etch patterns in the former case. The etching of as-grown crystals is suggested to be due to a fault in the growth process, resulting into conditions favourable for dissolution rather than growth.