Semiconducting Bi2S3 thin films were prepared on stainless steel and fluorine-doped tin oxide (FTO) coated glass substrates from non-aqueous media using the electrodeposition technique. It has been found that bismuth nitrate and thiourea in the volumetric proportions as 8:2 and their equimolar solutions of 0.05 M concentration form good quality films of Bi2S3. The characterization of the prepared films was carried out using the X-ray diffraction and optical absorption techniques. These studies reveal that, as deposited films are polycrystalline having an optical band edge (direct) 1.8 eV. (C)2000 Elsevier Science S.A. All rights reserved.