In this paper, lead hafnate titanate (PHT) was derived by chemical solution deposition (CSD) and characterized as A thin film material. The thin films were tested for the usage as a ferroelectric thin film in view of Ferroelectric Random Access Memory (FRAM) devices and compared with an equivalent lead zirconate titanate (PZT) thin film, which was prepared under the same conditions. After determining the thickness and the morphology of the PHT films, electronic measurements were performed to investigate this material as a promising candidate in view of FRAM applications due to failure mechanisms like fatigue and imprint.