At high temperatures, SiC and Si3N4 react with water vapor to form a SiO2 scale. SiO2 scales also react with water vapor to form a volatile Si(OH), species. These simultaneous reactions, one forming SiO2 and the other removing SiO2, are described by paralinear kinetics. A steady state, in which these reactions occur at the same rate, is eventually achieved. After steady state is achieved, the oxide found on the surface is a constant thickness, and recession of the underlying material occurs at a linear rate. The steady-state oxide thickness, the time to achieve steady state, and the steady-state recession rate can be described in terms of the rate constants for the oxidation and volatilization reactions. In addition, the oxide thickness, the time to achieve steady state, and the recession rate also can be determined from parameters that describe a water-vapor-containing environment. Accordingly, maps have been developed to show these steady-state conditions as a function of reaction rate constants, pressure, and gas velocity. These maps can be used to predict the behavior of SiO2 formers in water-vapor-containing environments, such as combustion environments. Finally, these maps are used to explore the limits of the paralinear oxidation model for SiC and Si3N4.