We report fabrication and device characteristics of field-effect transistors (FETs) based on single crystals of one-dimensional (1-D) platinum chain compound, bis(1,2-benzoquinone-dioximato)platinum(II), Pt(bqd)(2). The device with the channel along Pt chains shows n-type field-effect properties with a mobility of as large as 0.2cm(2)/Vs under atmospheric conditions.