화학공학소재연구정보센터
Chemical Physics Letters, Vol.421, No.4-6, 534-539, 2006
Electronic properties of Cs-atom doped aluminum and silicon clusters: AlnCsm and SinCsm
The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5-14, m = 0-3) and SinCsm (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm Cs-atom doping causes (1) electron filling into the electronic shell structure of the Al-n, clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Si-n clusters, particularly at (n, m) = (10, 3) and (13, 1). (c) 2006 Elsevier B.V. All rights reserved.