Single-crystal silicon nanowires with the prism structures were synthesized by chemical vapor deposition of SiH4 gas at 450 degrees C. Fe particles which were located at the tip of the CNTs were employed as a catalyst for the growth of silicon nanowires (SiNWs). Transmission electron microscopy studies of the materials showed that the nanowires have a diameter of 50-70 nm and a length of several micrometers. High-resolution transmission electron microscopy demonstrated that the nanowires have excellent single-crystal characteristics. Both the CNTs and Fe play a key role in the growth process of the SiNWs. A growth mechanism was proposed for the growth of silicon nanowires under our experimental conditions. (c) 2005 Elsevier B.V. All rights reserved.