화학공학소재연구정보센터
Chemical Physics Letters, Vol.359, No.5-6, 473-479, 2002
An ab initio CCSD(T) potential energy surface for the Ar-I-2(X) complex
The van der Waals interaction of Ar atom with I-2 molecule is studied using the coupled-cluster with single and double excitations and a noniterative perturbation treatment of triple excitations (CCSD(T)) method. Augmented correlation consistent basis sets, aug-cc-pVQZ, are used for Ar atom, supplemented with an additional set (3s 3p 2d 2f 1g) of bond functions. Effective-core potentials (ECPs) augmented with diffusion (sp) and polarization (3df) functions, (SDD+G(3df)), have been employed for the halogen I atoms. The potential energy surface of the ground electronic state of Ar-I-2, show a double-minimum topology with an isomerization barrier of 132 cm(-1), this is rather high, indicating the existence of two stable isomers at low temperatures. We calculated the J = 0 vibrational vdW levels and the lowest two n = 0, 1 assigned to linear isomers, while the n = 2 level is found only 1.7 cm(-1) above the n = 1 and corresponds to the T-shaped configuration. The CCSD(T) dissociation energies for the linear and T-shaped configurations are found to be D-0(L) = 237.8 cm(-1) and D-0(T) = 212.0 cm(-1), confirming previous theoretical and experimental investigations. (C) 2002 Elsevier Science B.V. All rights reserved.