화학공학소재연구정보센터
Chemical Physics Letters, Vol.348, No.1-2, 102-106, 2001
A model of VDAC structural rearrangement in the presence of a salt activity gradient
We have considered the structural transformations of a voltage dependent anion-selective channel (VDAC) known as 'gating'. We analysed the redistribution of VDAC among its states. The difference in electrostatic energy between the trans-closed and cis-closed states of VDAC is shown to be the cause of changes in the voltage dependence of the gating in the presence of a salt activity gradient. The asymmetry in the voltage dependence of the open probability about zero millivolts was connected with the apparent location of the voltage sensor. The theory describes the experimental data satisfactorily and explains the nature of the shift of the probability curve as well as the differences found in the asymmetry of the curve for different salts.