Tuning of structural and electrical properties of indium oxide (In2O3) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In2O3(0001) and body-centered cubic In2O3(001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions. (C) 2006 Elsevier B.V. All rights reserved.