Crystalline Dy2O3, Sc2O3, and amorphous high-k DyScO3 thin films have been deposited on Si(100) substrates by metallorganic chemical vapor deposition (MOCVD) using two metal precursors M(EDMDD)(3) [M=Dy, Sc; EDMDD=6-Ethyl-2,2-Di Methyl -3,5-Decane Dionato]. The precursors were evaluated in terms of efficiency and growth rate under various conditions, viz. vaporizer and susceptor temperatures, reactor pressure, injection rate, and injection delay between the two precursors. Amorphous DyScO3 films with nearly correct stoichiometry were deposited within the temperature range of 560-700 degrees C. These amorphous films were smoother than the crystalline binary oxides and reached a density of around 85% of the bulk crystalline density. Amorphous structure and surface smoothness retained up to an annealing temperature as high as 950 degrees C. The thickness of the SiOx interlayer did not vary with deposition temperature, but annealing at temperatures above 900 degrees C increased the interlayer thickness. Electrical properties are promising; the dielectric constant of DyScO3 (k approximate to 22) is much higher than that of the binary oxides Dy2O3 and Sc2O3 (k approximate to 10), and the leakage currents are very low compared to SiO2. (C) 2007 The Electrochemical Society.