The investigations of the influence of gas pressure and input power on the Cl-2 plasma parameters in the inductively coupled plasma system were carried out. The investigations combined plasma diagnostics by Langmuir probe and plasma modeling using the self-consistent global model with Maxwellian approximation for electron energy distribution function. From the experiments, it was found that an increase of gas pressure in the range of 0.27-3.33 Pa at 400-700 W input power results in decreasing both electron temperature (3.3-2.0 eV) and density (6.6 x 10(10) - 3.0 x 10(10) cm(-3) for 400 W and 1.2 x 10(11) -6.4 x 10(10) cm(-3) for 700 W). The model showed an outstanding agreement with the experiments and provided the data on densities and fluxes of active species. These data combined with the model of etch kinetics demonstrated the possibility of different etch rate behaviors depending on the input process parameters as well as on the properties of the etched surface. (C) 2007 Elsevier B.V. All rights reserved.