Journal of Physical Chemistry B, Vol.111, No.24, 6798-6806, 2007
Prediction of standard interfacial electron-transfer rate constants for the Ru(NH3)(6)(3+/2+) couple through omega-hydroxyalkanethiol self-assembled monolayers on gold electrodes
Two relatively simple approaches are developed and used to calculate (predict) the standard interfacial electron-transfer (ET) rate constants (k degrees) of the Ru(NH3)(6)(3+/2+) couple dissolved in aqueous electrolyte solutions in contact with Au electrodes coated with self-assembled monolayers (SAMs) composed of HS(CH2)(n)OH as functions of both n and temperature. These approaches are suggested by the conclusion reached by Smalley et al. (J. Electroanal. Chem. 2006, 589, 1-6) that the interfacial ET rate of a solution-dissolved redox couple in contact with a SAM is, within 1 order of magnitude, the same as the (normalized) interfacial ET rate of a similar attached (as a constituent of a similar SAM) couple. The calculations, therefore, employ the measured electronic coupling of the attached (to Au electrodes through alkanethiolate bridges) -PyRu(NH3)(5)(3+/2+) couple. The two approaches also both include dynamic solvent effects on the ET kinetics and the influence of electronic coupling on the activation barrier for the ET reaction. At T = 298 K and n = 3, 11, and 14, the predicted rate constants are in very good agreement with the existing measurements of k degrees. However, for n < 3 at 298 K, the predicted rate constants are extremely large (i.e., > 4.5 cm s(-1)) and do not tend toward a limiting value. Additionally, even if the electronic coupling between a Au electrode and a Ru(NH3)(6)(3+/2+) moiety located at the surface of the SAM is > 0.1 eV, the calculated standard rate constant is not directly proportional to the inverse of the longitudinal dielectric time of the solvent. A primary reason for both the absence of a limiting value for the predicted k degrees's at 298 K and the attenuated influence of dynamic solvent effects is the activation energy barrier suppression caused by large values of the electronic coupling.