Fabrication and performance of large-detuning InGaAs/GaAs strained, double-quantum-well, proton-implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton implant aperture is used to confine the current flow and the single-point defect photonic crystal is used to confine the optical mode, while the oxide aperture is introduced to reduce the leakage current. Single fundamental mode (side-mode suppression ratio > 20 dB) continuous wave output power of 0.18 mW has been achieved in the 1170 nm range at room temperature. (c) 2007 The Electrochemical Society.