Potassium-doped strontium barium niobate (SBN) thin films have been fabricated directly on p-type (100)Si substrates using pulsed laser deposition method. The presence of potassium ions and the use of appropriate oxygen pressure help to produce e-axis oriented SBN films. Postannealing at high temperature also enhances the formation of tetragonal tungsten-bronze phase SBN. Excellent guided mode propagation for 632 nm wavelength radiation has been demonstrated. On the basis of our studies, we have shown that highly e-axis oriented SBN films grown directly on (100)Si substrates can be achieved and SBN is a suitable material for developing integrated electro-optic devices. (c) 2006 Elsevier B.V. All rights reserved.