The effect of different heat-treatments during the hydrogen-induced exfoliation of a thin InP layer to control surface roughness was investigated. Hydrogen implantation was carried out by implanting InP with 5x10(16) H-2(+)/cm(2) at 150 keV. Exfoliation and transfer of the layer to a GaAs substrate occurred at either 150 or 300 degrees C. Exfoliation at 150 degrees C produced smoother surfaces, 2.8 nm, compared to the sample exfoliated at 300 degrees C, 8.5 nm. This change in surface morphology exhibits a much larger impact than the effect of implantation energy (i.e., straggle) on the surface morphology. The difference is attributed to the ability to trap hydrogen and form extended defects parallel to the surface at the lower temperature. Additionally, the exfoliation depth of the lower temperature specimen is slightly deeper than the specimen exfoliated at 300 degrees C, indicating that the hydrogen diffuses towards the peak damage region at the higher temperatures. (c) 2007 The Electrochemical Society.