Nickel displacement deposition into porous silicon with pores of aspect ratio as high as similar to 200 has been experimentally studied. High degree of thickness uniformity of the plated nickel inside the pores has been achieved by controlling the plating bath chemistry and the reaction time. The deposited nickel displaces the Si that forms the porous skeleton allowing for continued mass transport of nickel ions toward the bottom and consequently uniform deposition inside the pores. High nickel concentration, low pH, and the use of inhibiting additive coumarin greatly shorten the time needed to achieve uniform deposition. (c) 2007 The Electrochemical Society.