We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm(2) V-1 s(-1), an on/off ratio of 10(5), and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm(2) V-1 s(-1) has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S center dot center dot center dot S interactions may contribute to the high performance.