The vanadium oxide (VO2) films have been prepared on SiO2/Si substrates by using a modified Ion Beam Enhanced Deposition (IBED) method. During the film deposition, high doses of Ar+ and H+ ions have been implanted into the deposited films from the implanted beam. The resistance change of the VO2 films with temperature has been measured and the phase transition process has been observed by using the X-ray Diffraction technique. The phase transition of the IBED VO2 films starts at a low temperature of 48 degrees C and ends at a high temperature of 78 degrees C. It is found that the phase transition characteristics can be adjusted by changing the annealing temperature or the time and the phase transition characteristics of the IBED VO2 films depend on the quantity and location of argon atoms in the film matrix. (c) 2006 Elsevier B.V. All rights reserved.