Previous Article Next Article Table of Contents Journal of the American Chemical Society, Vol.128, No.50, 15950-15951, 2006 DOI10.1021/ja063083d Export Citation Properties of Cu(thd)(2) as a precursor to prepare Cu/SiO2 catalyst using the atomic layer epitaxy technique Chen CS, Lin JH, You JH, Chen CR Please enable JavaScript to view the comments powered by Disqus.
