Gallium indium phosphide (Ga (x) In1-x P) epitaxial layers were grown on GaAs substrates by chemical beam epitaxy (CBE) without thermally precracking the group V precursor. Trisdimethylaminophosphine (TDMAP), triisopropylgallium (TIPGa), and ethyldimethylindium (EDMIn) were used as the phosphorus, gallium and indium sources, respectively. Ga (x) In1-x P was grown without group V precracking for substrate temperatures in the range of 400-520 degrees C. Above 500 degrees C, the epilayers had a hazy appearance presumably due to being phosphorus deficit. A strong solid composition dependence on substrate temperature was observed. The samples were In-rich at low growth temperatures and Ga-rich at high growth temperatures. It was possible to grow the Ga (x) In1-x P epilayers over a large composition range with good morphology and strong photoluminescence. Values of full width at half maximum were as low as 45 meV at 14 K photoluminescence measurements.