We have investigated the electrical and optical properties of pulsed-laser-deposited Sb-doped SnO2 films (250 nm thick) as a function of the oxygen partial pressure. The SnO2 films were grown on glass substrates using a SnO2 target containing 5 atom % Sb. The distance between the substrate and the target was 7 cm and working pressure varied from 1.1 to 13.3 Pa. The target was ablated using KrF excimer laser with energy density of 3.75 J/cm(2). It is shown that the electrical and optical properties of the films grown at 480 degrees C with 3000 pulses sensitively depend on the oxygen pressure. The electron concentration is maximum (5.6 x 10(20) cm(-3)) at 4 Pa, the electron mobility is maximum (8.5 cm(2) V-1 s(-1)) at 9.3 Pa, and the resistivity is minimum (2.5 x 10(-3) Omega cm) at 4 Pa. The transmittance is shown to depend on the oxygen pressures. X-ray diffraction results show that the crystalline quality of the films becomes improved with decreasing oxygen pressure. It is further shown that the sample grown at 1.1 Pa contains oxygen-deficient phases. The UV absorption edge of the films shifts toward the shorter wavelengths with decreasing oxygen pressure, which is attributed to Burstein-Moss shift. (c) 2006 The Electrochemical Society.