The new static vacuum system with laser-getter evacuation is proposed. The CrxHg1-xSe (x=0.1; 0.2) and CdxHg1-xSe (x=0.25; 0.6) thin films are prepared by pulsed laser sputtering in static vacuum and their structural properties are studied as a function of substrate temperature. It is shown that at substrate temperature 360 K the obtained films are polycrystalline, and at 380-390 K they are textured, offering mobilities similar to 10(4) cm(2)/V.s for CrxHg1-xSe and similar to 10(3) cm(2)/V.s for CdxHg1-xSe. For the CrxHg1-xSe films on the temperature dependence in the region of 200 K an increase in the Hall coefficient is observed which is attributable to a change in Cr charge state. Laser recrystallization method was also used to obtain CdTe and Cd0.8Mn0.2Te based barrier structures in static vacuum, exhibiting rectifying properties with rectifying factor k=10(4) and 30, respectively. (c) 2005 Elsevier B.V All rights reserved.