a-SiC:H/a-Si:H p-i-n/p-i-n tandem cells with different i-layer thickness have been produced by PECVD and tested for a proper fine-tuning of the spectral collection efficiency The tandem. structure takes advantage on the radiation wavelength selectivity due to the different light penetration depth inside the a-Si:H and a-SiC:H absorbers. The thickness and the absorption coefficient of the front p-i-n cell were optimized for blue collection and red transmittance and the thickness of the back one adjusted to achieve full absorption in the green and high collection in the red spectral ranges. Preliminary results show that device optimization for red detection can be obtained by reducing the thickness of the internal recombination junction while by increasing the intrinsic layer of the bottom a-Si:H cell, a better detection of the green color under appropriated applied voltages is foreseen. The physics behind the device functioning is explained through a numerical simulation of the internal electrical configuration of the device in dark and under different wavelength irradiations. Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response. Experimental results about the spectral collection efficiency are presented and discussed from the point of view of the color sensor applications. (c) 2005 Elsevier B.V All rights reserved.