화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.153, No.8, D134-D137, 2006
Photoluminiscence of naphthalimide derivatives deposited onto nanostructured porous silicon
4-Acetamide and 4-methoxy N-substituted 1, 8-naphthalimide derivatives were deposited onto nanostructured porous silicon. High photoluminescence in the blue-green region of the visible range is observed from the naphthalimide derivatives grown onto porous silicon. Based on Fourier transform infrared spectroscopy measurements, the interaction through hydrogen bridges is proposed to be the mechanism of naphthalimide fixation to the nanostructured Si-based surface. This mechanism would be favored by the high hydrogen concentration on the nanometric porous structure. These results suggest the potential use of naphthalimides in light-emitting solid state devices. (c) 2006 The Electrochemical Society.