화학공학소재연구정보센터
Thin Solid Films, Vol.510, No.1-2, 88-94, 2006
Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)(4) and Sm(DPM)(3) (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal-organic chemical vapor deposition
Samarium-doped ceria (SDC) thin films were prepared from Sm(DPM)(3) (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) and Ce(DPM)(4) using the aerosol-assisted metal-organic chemical vapor deposition method. alpha-Al2O3 and NiO-YSZ (YSZ = Y2O3-stabilized ZrO2) disks were chosen as substrates in order to investigate the difference in the growth process on the two substrates. Single cubic structure could be obtained on either alpha-Al2O3 or NiO-YSZ substrates at deposition temperatures above 450 degrees C; the similar structure between YSZ and SDC results in matching growth compared with the deposition on alpha-Al2O3 substrate. A typical columnar structure could be obtained at 650 degrees C on alpha-Al2O3 substrate and a more uniform surface was produced on NiO-YSZ substrate at 500 degrees C. The composition of SDC film deposited at 450 degrees C is close to that of precursor solution (Sm: Ce = 1 :4), higher or lower deposition temperature will both lead to sharp deviation from this elemental ratio. The different thermal properties of Sm(DPM)(3) and Ce(DPM)(4) may be the key reason for the variation in composition with the increase of deposition temperature. (c) 2005 Elsevier B.V. All rights reserved.