By applying low-temperature process below 800 degrees C, we have fabricated n-MOSFET with a strained Si1-yCy channel. The strained Si1-yCy films were grown on Si substrate with a substrate temperature of 200 degrees C by using a Hot Wire Cell method. In the previous work, the degradation of the device performance was found due to the poor interface between the directly grown Si1-yCy channel layer and the source/drain regions. In this work, we applied the new device fabrication process and improved the electrical characteristics of the Si1-yCy MOSFET. Furthermore, it was succeeded to enhance the effective electron mobility of n-MOSFET by introducing stress into the Si1-yCy channels. (c) 2005 Published by Elsevier B.V.