Atomic layer processing has been demonstrated for doping of SiGe during Reduced Pressure Chemical Vapour Deposition (RPCVD) in a commercial single wafer reactor. Atomic level control of dose and location has been obtained for B doping using B2H6 and for P doping using PH3. The main idea of atomic layer processing is the separation of adsorption of the reactant gases from the deposition process. By this way, self-limitation has been shown for P doping. By lowering the temperature for B2H6 exposure (100 degrees C), the non-self-limiting character of the B doping process can be changed to self-limitation. By this manner, very shallow doping profiles with low sheet resistance have been obtained, capable for future ultra-shallow junction applications. P atomic layer doping is shown to be suitable for the creation of steep and narrow doping profiles suitable for high-performance pnp Heterojunction Bipolar Transistors (HBTs). This result, together with the already demonstrated usage of B atomic layer doping for npn HBTs, demonstrates the capability of the atomic layer processing approach for future devices with critical requirements for dopant dose and location control. (c) 2005 Elsevier B.V. All rights reserved.