The relaxation of strain in Si/Si1-xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patteming and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 mu m-width line, the strain relaxation was observed at 0.4 mu m inside of the stripe-patterned lieterostructure. Therefore, it is suggested that strain relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 gin away from the edge. (c) 2005 Elsevier B.V. All rights reserved.