VOx 박막의 구조적 특성과 전기적 특성에 대한 열처리 영향

이장우; 정지원; Jang Woo Lee; Chee Won Chung

Journal of the Korean Industrial and Engineering Chemistry, Vol.17, No.5, 471-475, October, 2006

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VOx 박막의 구조적 특성과 전기적 특성에 대한 열처리 영향

Effect of Annealing on Structural and Electrical Properties of VOx Thin Films

이장우, 정지원 ^†

인하대학교 화학공학과

Jang Woo Lee, and Chee Won Chung^†

Department of Chemical Engineering, Inha University, Incheon 402-751, Korea

E-mail:

초록

VOx 박막이 상온에서 Pt/Ti/SiO2/Si 기판위에 반응성 radio frequency (rf) 마그네트론 스퍼터링 방법에 의하여 450 nm 두께로 증착되었다. 증착 공정에서 산소의 농도와 타겟에 인가되는 rf power를 변수로 설정하여 증착 속도를 조사하였다. VOx 박막의 증착속도는 산소 농도가 증가함에 따라서 감소하고, rf power가 증가할수록 증가하는 것이 관찰되었다. 증착된 VOx 박막은 O2와 N2 가스 분위기에서 450 ℃의 온도로 2, 4, 그리고 6 h 동안 각각 열처리 되었고, 열처리 과정을 진행한 후 x-ray diffraction (XRD) 분석을 이용하여 열처리 전과 후의 결정성 변화를 관찰하였다. 그리고 열처리 전과 후의 VOx 박막의 표면과 단면을 field emission scanning electron microscopy (FESEM)를 이용하여 관찰하였으며 전류-전압 측정을 이용하여, 증착된 VOx 박막의 metal-insulator transition (MIT) 특성을 관찰하였다. N2 분위기에서 열처리된 VOx 박막보다 O2 분위기에서 열처리된 VOx 박막에서 더 우수한 MIT 특성을 관찰 할 수 있었다.

VOx thin films with the thickness of 450 nm were prepared on a Pt/Ti/SiO2/Si substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of VOx thin films were investigated as a function of O2 concentration and rf power. As the O2 concentration in a O2/Ar mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited VOx thin films were annealed at 450 ℃ for 2, 4, and 6 h in O2 and N2 ambient. After annealing, the phase changes of VOx thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of VOx thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of VOx thin films were measured using current-voltage measurement. The excellent MIT properties were observed in VOx thin films annealed in O2 ambient.

Keywords:metal-insulator transition property;VOx;sputtering;annealing

[References]

Hong JM, J. Solid State Chem., 45, 1 (1982)
Ermine H, Picard F, Vincent D, Opt. Eng., 32, 2092 (1993)
El Mandouh ZS, Selim MS, Thin Solid Films, 371(1-2), 259 (2000)
Takahashi Y, Kanamori M, Hashimoto H, Moritani Y, Manuda Y, J. Mater. Sci., 24, 192 (1989)
Chudnovskii FA, Odynets LL, Pergament AL, Stefanovich GB, J. Solid State Chem., 122, 95 (1996)
Borek M, Qian F, Hagabushnam V, Singh RK, Appl. Phys. Lett., 63, 3288 (1993)
Rata AD, Chezan AR, Presura C, Hibma T, Surf. Sci., 341, 532 (2003)
Rozgonyi GA, Hensler DH, J. Vac. Sci. Technol. A, 5, 194 (1968)
Bugaev AA, Zakharchenya BP, Chudnovskii FA, in Metal-Semiconductor Phase Transition and Its Application, Leningred, Nauka (1979)
Wang SB, Zhou SB, Huang G, Yi XJ, Surf. Coat. Technol., 191, 330 (2005)

[Related Articles]

[1] Hong JM, J. Solid State Chem., 45, 1 (1982)

[2] Ermine H, Picard F, Vincent D, Opt. Eng., 32, 2092 (1993)

[3] El Mandouh ZS, Selim MS, Thin Solid Films, 371(1-2), 259 (2000)

[4] Takahashi Y, Kanamori M, Hashimoto H, Moritani Y, Manuda Y, J. Mater. Sci., 24, 192 (1989)

[5] Chudnovskii FA, Odynets LL, Pergament AL, Stefanovich GB, J. Solid State Chem., 122, 95 (1996)

[6] Borek M, Qian F, Hagabushnam V, Singh RK, Appl. Phys. Lett., 63, 3288 (1993)

[7] Rata AD, Chezan AR, Presura C, Hibma T, Surf. Sci., 341, 532 (2003)

[8] Rozgonyi GA, Hensler DH, J. Vac. Sci. Technol. A, 5, 194 (1968)

[9] Bugaev AA, Zakharchenya BP, Chudnovskii FA, in Metal-Semiconductor Phase Transition and Its Application, Leningred, Nauka (1979)

[10] Wang SB, Zhou SB, Huang G, Yi XJ, Surf. Coat. Technol., 191, 330 (2005)