Photoresist removal is one of the most important techniques in the fabrication of semiconductor devices. Here, H atoms generated on heated W catalyzer from H-2 gas molecules were used for photoresist removal instead Of O-2-plasma ashing. Resist removal conditions such as catalyzer temperature, catalyzer structure, substrate temperature, H-2 pressure and H-2 flow rate were extensively Studied. It was found that removal rate over 1 mu m/min is achieved for positive-type i-line resist. (c) 2005 Elsevier B.V. All rights reserved.