We have deposited beta-SiC thin films on Si(100) substrates using single source precursors by the thermal metal-organic chemical vapor deposition (MOCVD) method and analyzed their surface characterization. Diethylmethylsilane (C2H5SiH(CH3)C2H5) was used as a single source precursor without any carrier or bubbler gas. With an increase of the deposition temperature from 700 to 900 degrees C, beta-SiC thin films with relatively small crystals and smoother surfaces were deposited on Si(100) substrates. However, when the deposition temperature was raised to 1000 degrees C, the surface of the beta-SiC thin film appears bursting on the deposited thin film. We could thus obtain the optimum beta-SiC thin film using diethylmethylsilane at a deposition temperature as low as 900 degrees C. Moreover, we have succeeded in growing beta-SiC nanowires with 40100 nm diameter on nickel catalyzed Si(100) substrates using dichloromethylvinylsilane (CH2CHSi(CH3)Cl-2), at deposition temperatures as low as 800 degrees C and a pressure of 5.0 x 10(-2) Torr. It is worth noticing that the initial growth rates of the deposited beta-SiC thin films and nanowires strongly depend on the deposition temperature rather than on the time. (c) 2005 Elsevier B.V. All rights reserved.