The mechanism of alumina fort-nation from tri-methyl aluminum and oxygen (02) Using catalytic-chemical vapor deposition with a tungsten catalyzer was investigated using quadrupole mass spectrometry. Above 500 degrees C, the tungsten catalyzer allowed Al to separate from TMA. The decrease in O-2 and alumina film growth all occurred at 500 degrees C. From these results, it was concluded that the Al, derived from the decomposition of TMA, reacted with 02 to produce AlO via a vapor phase chemical reaction. The alumina films can be deposited onto Si wafers at low substrate temperatures including room temperature. (c) 2005 Elsevier B.V. All rights reserved.