SnS films have been prepared on the indium tin oxide coated glass substrates by the constant-current electro-deposition. By investigating the influence of the deposition parameters on the composition of the deposited films, we obtained the optimum deposition parameters with pH = 2.7, Sn2+/S2O32- = 1/5, J = 3.0 mA/cm(2) and t = 1.5 h. Many nearly stoichiometric SnS films were prepared. These films were characterized with X-ray diffraction and scanning electron microscopy analysis, and they were polycrystalline with orthorhombic structure. Their direct band gaps were estimated to be 1.21 similar to 1.42 eV from optical measurements. The films have p-type conductivity with a resistivity of 7.5 similar to 20 Omega cm. (c) 2005 Elsevier B.V. All rights reserved.