Global kinetic mechanisms and models are developed to describe the growth of tin oxide (SnO2) films from monobutyltintrichloride (MBTC) by chemical vapor deposition. Several candidate mechanisms are examined. Deposition from MBTC + O-2 mixtures is best described by a mechanism in which MBTC reacts with an oxygen-covered surface, while deposition from MBTC + O2 + H2O mixtures can be effectively predicted using a mechanism in which a gas-phase MBTC-H2O complex is formed, adsorbed by the surface, and reacts with gas-phase O-2 to form SnO2. Both models are based on new and previously reported growth- rate data obtained in a stagnation flow reactor (SFR) as a function of the inlet concentrations of MBTC, O-2, and H2O, substrate temperature, inlet gas velocity, and total pressure. Model rate constants were obtained by fitting to SFR growth rates obtained at 25 Torr and relatively low MBTC concentrations (0.1-0.4 mol %). The predictions are within a factor of 2 of SFR data obtained at higher pressures (up to 100 Torr), as well as with results in the literature obtained at 1 atm, suggesting that the deposition mechanisms used capture the essential chemistry over a broad range of chemical vapor deposition conditions. (c) 2006 The Electrochemical Society.