High resolution focused ion beam technology is based on the use of field ionization sources. The most widely used source by far is the liquid metal ion source (LMIS) and most focused ion beam systems today employ it. The gas phase field ionization source (GFIS) is hardly employed today except in field ionization microscopy, but present day technology would allow its unique properties vis a vis the liquid metal ion source, including smaller virtual source size and energy spread, and the ability to produce ions from H, He, and heavier noble gases, to be exploited. If the GFIS is used as an ion source for a focusing column it would be useful to be able to calculate its emission properties (current versus voltage) as a function of emitter shape (a parameter not variable in a LMIS). Such a calculation had not been done precisely based on realistic emitter shapes, In this work, a theoretical description of the mechanism for ion production in a GFIS is presented. The comparison of the result with the experimental data for a H-2-Ir GFIS is given, which shows reasonable agreement. With the present model, when used with the model for the optical properties of the GFIS (to be published), a focused ion beam (FIB) optical designer can make reasonable predictions about the properties of a GFIS-based FIB. Based on the modeling, we predict that a sub 1 nm beam of He+ should be possible with similar to 1 pA current. (c) 2005 American Vacuum Society.