A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)(2)(ln(0.52)Al(0.48)As)(2) quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy. Threefold 3,6-nm-thick In0.53Ga0.47As QWR layers were used as an active layer, where lateral confinement potential was induced by a nanometer scale interface corrugation of InGaAs/(InGaAs)(2)(InAlAs)(2) with an amplitude of 7 nm and a period of 65 nm. Photoluminescence was strongly polarized along the wire direction [P &3bond; (I-parallel to -I-perpendicular to)/(I-parallel to + I-perpendicular to)=0.43-0.54] in the temperature range from 12 to 150 K. indicating their good one dimensionality. A 10 mu m X 500 mu m stripe-contact QWR laser with uncoated cleaved mirrors oscillated with a threshold current density of 5.2 kA/cm(2) and a lasing wavelength of 1215 nm at 150 K under pulsed current condition. (c) 2005 American Vacuum Society.