Luminescence properties of CdSiO3:Pb2+ long-afterglow phosphor, including photoluminescence, fluorescence lifetime, long-afterglow decay curve, and thermostimulated luminescence spectra, are investigated in this paper. Photoluminescence of the synthesized phosphor shows a single intense Pb2+-related broadband emission located at 498 nm. Moreover, the Pb2+-related broadband emission still exists for more than 2 h, even after the ultraviolet irradiation source has been removed. Both the fluorescence and long-afterglow decay lifetime of the Pb2+ ions contain a fast decay component and slow decay one. Thermo-stimulated luminescence curve study indicates that the incorporation of Pb2+ ions into CdSiO3 host produces two suitable dense trapping centers at 0.55 and 0.43 eV, which is the origin of the long-afterglow phenomenon in this kind of material at room temperature. This finding has enlarged the activator of the family of long-afterglow phosphors available. (c) 2006 The Electrochemical Society.