The improved performance of polyalkylfluorene light-emitting device has been achieved through the optimization of processing conditions and device configuration. The current density, brightness, power efficiency, and operation lifetime of polymer light-emitting device (PLED) were strongly dependent on the surface treatment of anode, the film thickness of light-emitting polymer (LEP), and the cathode configuration. The anode surface treated with O-2 plasma exhibited a higher current density and brightness than the CF4 plasma treated device. However, better operation stability was obtained for the CF4 plasma treated device than for the O-2 plasma treated device. The maximum of brightness and power efficiency has been achieved for the PLED with an LEP thickness of 80 nm. The PLED with LiF/Ca/Al cathode possesses a better power efficiency and operation stability than does the Ca/Al or LiF/Al based PLED. The influences of device fabrication conditions and device configuration on the performance of a polyalkylfluorene-based PLED are discussed in detail. (c) 2006 Wiley Periodicals, Inc.