We have investigated the formation of gas-phase adducts of trimethylaluminum and trimethylgallium with ammonia using room-temperature Fourier transform infrared experiments and density functional theory calculations. Our results indicate for the first time that, at higher partial pressures, a product distinct from the well-known (CH3)(3)M:NH3 adduct grows in for both M = Al and M = Ga. Comparison of the experimental and calculated IR spectra, along with calculations of the energetics, indicates that this second product is the result of hydrogen bonding of a second NH3 molecule to the (CH3)(3)M:NH3 adduct and can be written as (CH3)(3)M:(NH3NH3)-N-.... The binding energy of this hydrogen-bonded adduct is calculated to be 26.8 kcal/mol for M = Al and 18.4 kcal/mol for M = Ga and is lower in energy (more stable) relative to the 1:1 (CH3)(3)M:NH3 adduct by 7.2 kcal/mol for M = Al and 6.6 kcal/mol for M = Ga. In contrast, an alternative complex involving the formation of two separate M-N donor-acceptor bonds, which is written as H3N:(CH3)(3)M:NH3, is calculated to be lower in energy relative to (CH3)(3)M:NH3 by only 0.1 kcal/mol for M = Al and 0.2 kcal/mol for M = Ga and is not observed experimentally. These results show that hydrogen bonding plays an important role in the interaction of ammonia with metal organic precursors involving Al, Ga, and In, under typical metal organic chemical vapor deposition AlGaInN growth conditions.