Electrical properties of (Bi3.5La0.5)Ti3O12 thin-films prepared by liquid sourcemisted chemical deposition

Hyun Jin Chung; Suk Jin Chung; Min Ku Jeon; Seong Ihl Woo

Korean Journal of Chemical Engineering, Vol.23, No.2, 329-332, March, 2006

DOI10.1007/BF02705737 Export Citation

Electrical properties of (Bi3.5La0.5)Ti3O12 thin-films prepared by liquid sourcemisted chemical deposition

Hyun Jin Chung, Suk Jin Chung¹, Min Ku Jeon², and Seong Ihl Woo^{2, †}

Memory TG-2 process Team, R&D Division, Hynix Semiconductor Inc., #1 Hyangjeong-dong, Hungduk-gu, Cheongju-si 361-725, Korea
¹Semiconductor R&D center, Samsung electronics Co. Ltd., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-Gun, Kyungki-Do 449-900, Korea
²Department of Chemical and Biomolecular Engineering & Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea

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The (Bi3.5La0.5)Ti3O12 (BLT) thin-films used in this study were fabricated on a Pt(111)/SiO2/Si(100) sub-strate by a Liquid Source Misted Chemical Deposition (LSMCD) technique. X-ray diffraction patterns showed thatthe BLT films were crystallized and no other phases were observed when annealed above 650oC. Grain size and remnantpolarizations increased with increase in the annealing temperature, while leakage current densities decreased. The remnant polarizations (Pr) increased from 2.0 to 4.8 and 19.0μC/cm2 with increase in the annealing temperature from 650to 700 and 750oC, respectively. The BLT films annealed at 700oC in O2 showed a good fatigue resistance of reducedpolarization by 10% after 109 switching cycles when 9V of bipolar voltage was applied at a frequency of 40kHz.

Keywords:Liquid Source Misted Chemical Deposition;(Bi3.5La0.5)Ti3O12 (BLT) Film;Bismuth Titanate;Ferroelectric Thinfilm

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[1] Chung HJ, Kim JH, Moon WS, Park SB, Hwang CS, Lee MY, Woo SI, Integrated Ferroelectrics, 12, 185 (1996)

[2] Cui DF, Wang HS, Chen ZH, Zhou YL, Lu HB, Yang GZ, Ma K, Chen H, Li L, Liu W, Zhang Y, J. Vac. Sci. Technol. A, 15(2), 275 (1997)

[3] Cummins SE, Cross LE, J. Appl. Phys., 39, 2268 (1968)

[4] Dearaujo CA, Cuchiaro JD, Mcmillan LD, Scott MC, Scott JF, Nature, 374(6523), 627 (1995)

[5] Huffman M, Integrated Ferroelectrics, 10, 39 (1995)

[6] Jeon MK, Chung HJ, Kim KW, Oh KS, Woo SI, Thin Solid Films, 489(1-2), 1 (2005)

[7] Jeon MK, Kim YI, Nahm SH, Woo SI, J. Phys. Chem. B, 109(2), 968 (2005)

[8] Jeon MK, Kim YI, Sohn JM, Woo SI, J. Phys. D-Appl. Phys., 37, 2588 (2004)

[9] Joo JH, Seon JM, Jeon YC, Oh KY, Roh JS, Kim JJ, Appl. Phys. Lett., 70, 3053 (1997)

[10] Joshi PC, Desu SB, J. Appl. Phys., 80, 2349 (1996)

[11] Joshi PC, Krupanidhi SB, J. Appl. Phys., 72, 5517 (1992)

[12] Kim YI, Jeon MK, Woo SI, J. Mater. Sci. Lett., 22(23), 1655 (2003)

[13] Muhammet R, Nakamura T, Shimizu M, Shiosaki T, Jpn. J. Appl. Phys., 33, 5215 (1994)

[14] Neumayer DA, Duncombe PR, Laibowitz RB, Saenger KL, Purtell R, Ott JA, Shaw TM, Grill A, Integrated Ferroelectrics, 18, 319 (1997)

[15] Park BH, Hyun SJ, Moon CR, Choe BD, Lee J, Kim CY, Jo W, Noh TW, J. Appl. Phys., 84, 4428 (1998)

[16] Park BH, Kang BS, Bu SD, Noh TW, Lee J, Jo W, Nature, 401, 682 (1999)

[17] Rae AD, Thompson JG, Withers RL, Acta Crystallogr. Sect. B-Struct. Sci., 48, 418 (1992)

[18] Seo KW, Cho SH, Lee SH, Korean J. Chem. Eng., 18(1), 75 (2001)

[19] Sun S, Lu P, Fuierer PA, J. Cryst. Growth, 205, 177 (1999)

[20] Watanabe T, Funakubo H, Mizuhira M, Osada M, J. Appl. Phys., 90, 6533 (2001)

[21] Yamamuka M, Kawahara T, Horikawa T, Ono K, Jpn. J. Appl. Phys., 36, 2555 (1997)