극자외선 리소그래피용 화학증폭형 레지스트

최재학; 노영창; 홍성권; Jaehak Choi; Young Chang Nho; Seong Kwon Hong

Journal of the Korean Industrial and Engineering Chemistry, Vol.17, No.2, 158-162, April, 2006

Export Citation

극자외선 리소그래피용 화학증폭형 레지스트

Chemically Amplified Resist for Extreme UV Lithography

최재학, 노영창 , 홍성권 ^{1, †}

한국원자력연구소 방사선이용연구부
¹충남대학교 공과대학 고분자공학과

Jaehak Choi, Young Chang Nho , and Seong Kwon Hong^{1, †}

Radiation Application Division, Korea Atomic Energy Research Institute, Daejeon 305-353, Korea
¹Department of Polymer Science and Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-308, Korea

E-mail:

초록

새로운 극자외선 리소그래피용 화학증폭형 레지스트의 매트릭스 수지로 poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate]를 합성하고평가하였다. 이 중합체로 제조된 레지스트로 KrF 엑시머 레이저 노광장비를 사용하여 선폭 120 nm (피치 240 nm)를 구현할 수 있었다. 극자외선 리소그래피 장비를 이용하여 평가한 결과 선폭 50 nm (피치 180 nm)의 포지형 패턴을 얻었다. CF4 플라즈마를 이용한 건식에칭내성 평가 결과 기존 원자외선 레지스트용 매트릭스 수지인 poly(4-hydroxystyrene)보다 약 10% 향상되었다.

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a CF4-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).

Keywords:extreme UV lithography;chemically amplified resist;adamantly methacrylate

[References]

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Brainard RL, Cobb J, Cutler A, J. Photopolym Sci. Technol., 16, 401 (2003)
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Matsuzawa NN, Oizumi H, Mori S, Irie S, Yano E, Okazaki S, Ishitani A, Microelectron. Eng., 53, 671 (2000)
Matsuzawa NN, Oizumi H, Mori S, Irie S, Shirayone S, Yano E, Okazaki S, Ishitani A, Dixon DA, Jpn. J. Appl. Phys., 38, 7109 (1999)
Nojaki K, Yano E, Fujitsu Sci. Tech. J., 38, 3 (2002)
Hein S, Angood S, Ashworth D, Basset S, Bloomstein T, Dean K, Kunz RR, Miller D, Patel S, Rich G, Proc. SPIE., 4345, 439 (2001)
Kim J, Oh T, Choi J. Lee J, Proc. SPIE., 5039, 689 (2003)
Barclay GG, Mao Z, Xiong K, Trefonas P, Proceedings of the 12th International Conference on Photopolymers, edited by H. Ito, M. M. Khojasteh, and W. Li, Society of Plastics Engineers Mid Husdon Section, 153 (2000)
Kim H, Jung D, Lee S, Choi S, Woo S, Kavanagh RJ, Barclay G, Blacksmith B, Kang D, Pohlers G, Cameron J. Mattia J. Caporale S, Penniman T, Joesten L, Thackeray JW, Proc. SPIE., 4345, 776 (2001)
Ito H, Breyta G, Hofer D, Sooriyakumaran R, J. Photopolym Sci. Technol., 7, 433 (1994)
Brainard RL, Henderson C, Cobb J, Rao V, Mackevich JF, Okoroanyanwu U, Gunn S, Chambers J, Connolly S, J. Vac. Sci. Technol. B, 17(6), 3384 (1999)
Domke W, Hirscher S, Kirch O, Kragler K, Lowack K, 2nd Int. EUVL Symposium, Antwerp, Belgium (2003)
AIXUV web site. http://www.aixuv.de/

[Related Articles]

[1] Golovkina VN, Nealey PF, Cerrina F, Taylor JW, Solak HH, David C, Gobrecht J, J. Vac. Sci. Technol. B, 22, 9 (2004)

[2] Brainard RL, Cobb J, Cutler A, J. Photopolym Sci. Technol., 16, 401 (2003)

[3] Cobb JL, Brainard RL, O'Connell DJ, Dentinger PM, Mater. Res. Soc. Symp. Proc., 705, 91 (2002)

[4] The 2003 Edition of the ITRS: Lithography, 2003 International Technology Roadmap for Semiconductors

[5] Matsuzawa NN, Okazaki S, Ishitani A, Microlith. World, Autumn, 20 (2000)

[6] Matsuzawa NN, Oizumi H, Mori S, Irie S, Yano E, Okazaki S, Ishitani A, Microelectron. Eng., 53, 671 (2000)

[7] Matsuzawa NN, Oizumi H, Mori S, Irie S, Shirayone S, Yano E, Okazaki S, Ishitani A, Dixon DA, Jpn. J. Appl. Phys., 38, 7109 (1999)

[8] Nojaki K, Yano E, Fujitsu Sci. Tech. J., 38, 3 (2002)

[9] Hein S, Angood S, Ashworth D, Basset S, Bloomstein T, Dean K, Kunz RR, Miller D, Patel S, Rich G, Proc. SPIE., 4345, 439 (2001)

[10] Kim J, Oh T, Choi J. Lee J, Proc. SPIE., 5039, 689 (2003)

[11] Barclay GG, Mao Z, Xiong K, Trefonas P, Proceedings of the 12th International Conference on Photopolymers, edited by H. Ito, M. M. Khojasteh, and W. Li, Society of Plastics Engineers Mid Husdon Section, 153 (2000)

[12] Kim H, Jung D, Lee S, Choi S, Woo S, Kavanagh RJ, Barclay G, Blacksmith B, Kang D, Pohlers G, Cameron J. Mattia J. Caporale S, Penniman T, Joesten L, Thackeray JW, Proc. SPIE., 4345, 776 (2001)

[13] Ito H, Breyta G, Hofer D, Sooriyakumaran R, J. Photopolym Sci. Technol., 7, 433 (1994)

[14] Brainard RL, Henderson C, Cobb J, Rao V, Mackevich JF, Okoroanyanwu U, Gunn S, Chambers J, Connolly S, J. Vac. Sci. Technol. B, 17(6), 3384 (1999)

[15] Domke W, Hirscher S, Kirch O, Kragler K, Lowack K, 2nd Int. EUVL Symposium, Antwerp, Belgium (2003)

[16] AIXUV web site. http://www.aixuv.de/