Single-crystalline Ti1-xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti1-xNbxO2 films with x >= 0.03 is 2-3 x 10(-4) Omega cm at room temperature. The carrier density of Ti1-xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 x 10(19) to 2 x 10(21) cm(-3). Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x <= 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1-xNxO2 is one of the promising candidates for the practical TCOs. (c) 2005 Elsevier B.V. All rights reserved.