We have implemented a kinetic Monte Carlo (KMC simulation to study the effects of wafer miscut and wafer defects on the morphologies of Si (111) surfaces etched in NH4F. Although a conventional KMC simulation reproduced previously published results, it failed to produce the morphologies observed in our experiments. By introducing both dopant sites and lattice defect sites into the model, we are able to simulate samples having different dopant elements and densities as well as different defect concentrations. Using the modified KMC simulation, the simulated surface morphologies agree well with the morphologies observed in our experiments. The enhanced model also gives insights to the formation mechanism for multiple level stacking pits, a notable morphology on the etched surfaces of samples with very small miscut angles.