Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement (PAD) method. Boron ions were implanted at 10 keV with 1 x 10(15) ions/cm(2) and 3 x 10(15) ions/cm(2) into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950 degrees C for 30 s by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of 5.93 eV for F-B binding energy in a segregated region. (c) 2005 The Electrochemical Society.