The annealing (25 - 700 degrees C) and measurement temperature (25 -150 degrees C) dependence of Schottky contact characteristics on n- GaN using a CrB2/ Ti/ Au metallization scheme were examined with current-voltage (I-V), scanning electron microscopy, and Auger electron spectroscopy measurements. The Schottky barrier height increased with anneal temperature up to 200 degrees C (maximum value of 0.62 eV), but decreased to 0.42 eV after annealing at 700 C. The reverse breakdown voltage of diodes with these contacts showed a similar dependence on anneal temperature. The barrier height showed only minor changes with measurement temperature up to 150 degrees C. The elemental profile obtained from samples annealed at 350 degrees C showed limited Ti diffusion into the gold layer. Annealing at 700 degrees C produced more significant diffusion of Ti. These contacts show promise for applications requiring good thermal stability, such as power amplifiers. (c) 2005 The Electrochemical Society.