화학공학소재연구정보센터
Thin Solid Films, Vol.488, No.1-2, 194-199, 2005
Properties of anatase CoxTi1-xO2 thin films epitaxially grown by reactive sputtering
Epitaxial CoxT1-xO2 anatase thin films were grown on (001)LaAlaO(3) by a reactive RF magnetron co-sputter deposition with water vapor serving as the oxidant. The use of water as the oxygen source proves useful in growing oxygen-deficient, semiconducting CoxTi1-xO2 by reactive sputter deposition, with undoped and Co-doped TiO2 thin films showing n-type semiconductor behavior, with carrier concentrations of 10(17)-10(18) cm(-3). Magnetization measurements of CoxTi1-xO2 (x=0.07) thin films reveal ferromagnetic behavior in M-H loop at room temperature with a saturation magnetization on the order of 0.7 Bohr magnetons/Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co2+ valence state. However, chemical analysis of surface structure indicates that a significant fraction of the cobalt segregates into a Co-Ti-O phase. This suggests that the ferromagnetic moments may reside in oxygen-bound Co that is segregated from the majority anatase phase. (c) 2005 Elsevier B.V All rights reserved.