Chalcogen-containing plasmas were used to convert indium, copper-indium, and copper-indium-gallium films into their respective chalcogen-containing phases. An argon plasma was used to activate either hydrogen sulfide or elemental selenium vapor. The article describes the inductively coupled plasma setup and its characterization using optical emission spectroscopy. The kinetics of selenide/sulfide formation were examined as a function of time and temperature. The thin films were characterized using x-ray diffraction, optical transparency, and scanning electron microscopy. In all cases the use of the plasma dramatically enhanced chalcogen reactivity. Indium films were completely converted to beta-In2S3 at 250 degrees C by plasma processing, while no evidence of this phase was observed in films treated thermally at 350 degrees C. The use of plasma enabled the complete conversion of Cu-In and Cu-In-Ga precursors to their ternary and quaternary chalcopyrite phases, respectively, at 350 degrees C in less than 1 h using chalcogen partial pressures < 1 Pa. (c) 2005 American Vacuum Society.